electron traps造句

• Application of electron trapping material in image information processing
  电子俘获材料在光信息处理中的应用
• Electron trapping center
  电子俘获中心
• So people call this kind material as electron trapping infrared up - conversion and optical storage material , too
  故人们又根据其特性称之为电子俘获型红外上转换及光存储材料( etm ? electrontrappinginfraredup - conversionandopticalstoragematerials ) 。
• We modified the electron trapping theory to be consistent with our simulation results . 2 . in the mp - lwfa simulation , we studied the influence of multiple pulses with various arrangements of the position of the pulses
  在mp - lwfa中，我们研究不同的脉冲长度、不同的脉冲间隔对产生尾流场的影响，着重讨论尾流场的饱和机制。
• As shallow electron traps ( sets ) dopants , the action of k4fe ( cn ) 6 that can increase photoelectron lifetime and photographic efficiency is analyzed . optimization concentration of k4fe ( cn ) 6 in cubic agcl emulsion is affirmed
  分析了k _ 4fe ( cn ) _ 6掺杂物作为一种浅电子陷阱掺杂剂对于提高光电子寿命、改善感光性能的作用机理。
• The luminescence theorem of aluminates strontium is studied , too . ce transfers energy to tb in ce and tb co - activated phosphors . light emission of phosphors is led by 4f - 4f - electron leap of tb ; its long lasting persistence is related to electron traps in sraljo , host lattice
  铆对锚有能量传递和敏化作用，该磷光体的光发射是锨的4f 4ffh于跃迁发射的结果：其余辉特性与铝酸锯晶格的电子陷阶等有关。
• The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically . the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps
  在辐照的位移效应方面：从理论上对电子辐照在4h - sic中引入的缺陷数量和各种缺陷能级进行了计算和分析，其中只有eh6 / eh7缺陷能级在sic中起着有效的复合中心的作用。
• To analysis the principle of degradation and destruction , a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed , which leads to a conception of critical trap electron density
  本文首次建立了晶界势垒高度与伏安特性参数之间的关系，提出了陷阱效应在冲击老化过程的作用模型，引入了“临界陷阱电荷密度”的概念。
• We found the " forward stimulated raman scattering " will be excited if the pulse length is greater than plasma wave length . the " forward stimulation raman scattering " decreases the phase velocity and the amplitude of the wake wave which will lead to the reduction of maximum kinetic energy of the electrons trapped
  结论是：当脉冲长度接近等离子体波长时，稀薄等离子体将发生“前向受激raman散射” ，它使脉冲后沿拉长，导致尾流场的相速度变小，以至于被尾流场“捕获”的电子最大动能大大下降。
• The systematically study of the preparation of alkaline earth sulfide system doped with rare earth and its optical storage properties not only expand new synthesize technology of electron trapping optical storage materials but also afford basis for improving materials properties and application in different application fields
  稀土掺杂硫化物体系的制备及其光学性能的系统研究，不但为电子俘获型光存储材料拓展了新的合成技术，也为进一步提高材料的性能及其在不同领域的应用提供了依据。
• On this condition , based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique , the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated . through the optimization of simulating parameters , not only the cross - section and trap depth of the shallow electron trap induced by the dopant , but also the optimal doping amount is obtained
  在此基础上，以微波吸收介电谱检测技术的实验结果为依据，对掺有k _ 4fe ( cn ) _ 6的agcl立方体微晶在室温下的曝光过程进行了模拟，通过调节模拟参数，不但计算出由掺杂剂引入的浅电子陷阱的俘获截面和陷阱深度，而且得到了这种掺杂乳剂的最佳掺杂浓度。